JPH0348671B2 - - Google Patents

Info

Publication number
JPH0348671B2
JPH0348671B2 JP57064478A JP6447882A JPH0348671B2 JP H0348671 B2 JPH0348671 B2 JP H0348671B2 JP 57064478 A JP57064478 A JP 57064478A JP 6447882 A JP6447882 A JP 6447882A JP H0348671 B2 JPH0348671 B2 JP H0348671B2
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
transistor
substrate
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57064478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58182270A (ja
Inventor
Takumitsu Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57064478A priority Critical patent/JPS58182270A/ja
Publication of JPS58182270A publication Critical patent/JPS58182270A/ja
Publication of JPH0348671B2 publication Critical patent/JPH0348671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP57064478A 1982-04-16 1982-04-16 トランジスタの製造方法 Granted JPS58182270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57064478A JPS58182270A (ja) 1982-04-16 1982-04-16 トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57064478A JPS58182270A (ja) 1982-04-16 1982-04-16 トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58182270A JPS58182270A (ja) 1983-10-25
JPH0348671B2 true JPH0348671B2 (en]) 1991-07-25

Family

ID=13259367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064478A Granted JPS58182270A (ja) 1982-04-16 1982-04-16 トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58182270A (en])

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4312302A1 (en) 2022-07-25 2024-01-31 Prime Planet Energy & Solutions, Inc. Battery
EP4312303A1 (en) 2022-07-25 2024-01-31 Prime Planet Energy & Solutions, Inc. Battery
EP4329053A1 (en) 2022-07-11 2024-02-28 Prime Planet Energy & Solutions, Inc. Sealed battery and method for manufacturing the same
EP4329061A1 (en) 2022-07-11 2024-02-28 Prime Planet Energy & Solutions, Inc. Sealed battery

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693464B2 (ja) * 1983-10-19 1994-11-16 富士通株式会社 絶縁ゲート型薄膜トランジスタの製造方法
JPS60109285A (ja) * 1983-11-17 1985-06-14 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPH084143B2 (ja) * 1985-09-27 1996-01-17 富士通株式会社 半導体装置およびその製造方法
JPS62252973A (ja) * 1986-04-25 1987-11-04 Nec Corp 順スタガ−ド型薄膜トランジスタ
JPS63126277A (ja) * 1986-07-16 1988-05-30 Seikosha Co Ltd 電界効果型薄膜トランジスタ
JPH079388Y2 (ja) * 1987-07-25 1995-03-06 カシオ計算機株式会社 薄膜トランジスタ
JPH0828512B2 (ja) * 1987-09-02 1996-03-21 松下電器産業株式会社 薄膜トランジスタ
JPH03184379A (ja) * 1989-12-13 1991-08-12 Toshiba Corp 薄膜トランジスタの製造方法
JPH06177388A (ja) * 1992-12-04 1994-06-24 Toshiba Corp 半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4329053A1 (en) 2022-07-11 2024-02-28 Prime Planet Energy & Solutions, Inc. Sealed battery and method for manufacturing the same
EP4329061A1 (en) 2022-07-11 2024-02-28 Prime Planet Energy & Solutions, Inc. Sealed battery
EP4312302A1 (en) 2022-07-25 2024-01-31 Prime Planet Energy & Solutions, Inc. Battery
EP4312303A1 (en) 2022-07-25 2024-01-31 Prime Planet Energy & Solutions, Inc. Battery

Also Published As

Publication number Publication date
JPS58182270A (ja) 1983-10-25

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